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| BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES High current gain bandwidth product. power dissipation.(PC=200mW) Production specification S9018 Pb Lead-free APPLICATIONS NPN epitaxial silicon transistor. ORDERING INFORMATION Type No. S9018 Marking J8 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 25 18 4 50 200 -55~150 Units V V V mA mW ELECTRICAL CHARACTERISTICS @ Ta=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Document number: BL/SSSTC085 Rev.A unless otherwise specified MIN 25 18 4 0.1 0.1 0.1 70 190 0.5 1.4 600 V V MHz www.galaxycn.com 1 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Test conditions IC=100A,IE=0 IC=0.1mA,IB=0 IE=-100A,IC=0 VCB=20V,IE=0 VCE=15V,IB=0 VEB=3V,IC=0 VCE=5V,IC=1mA IC=10 mA, IB= 1mA IC=10 mA, IB= 1mA VCE=5V, IC= 5mA f=400MHz TYP MAX UNIT V V V A A A BL Galaxy Electrical Silicon Epitaxial Planar Transistor Production specification S9018 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document number: BL/SSSTC085 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package A E Production specification S9018 SOT-23 SOT-23 Dim A B C D Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J E G H H C J K 0.1Typical All Dimensions in mm SOLDERING FOOTPRINT PACKAGE Device S9018 Unit : mm INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC085 Rev.A www.galaxycn.com 3 |
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